
TriQuint Semiconductor
General Description
The TriQuint T2G6003028-FS is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which features advanced field plate techniques o optimize power and efficiency at high drain bias operating conditions. This optimization can potentially ower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Product Features
• Frequency: DC to 6 GHz
• Output Power (P3dB): 26 W at 5.6 GHz
• Linear Gain: >14 dB at 5.6 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
APPLICATIONs
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers