부품명
SWI7N60
Other PDF
no available.
PDF
page
6 Pages
File Size
654.9 kB
제조사
Xian Semipower Electronic Technology Co., Ltd.
SWI7N60 데이터시트 - Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced super-junction technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, excellent avalanche characteristics, low gate charge and especially in low on resistance. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
FEATUREs
◾ High ruggedness
◾ RDS(ON) (Max 0.6Ω)@VGS=10V
◾ Gate Charge (Typical 21nC)
◾ Improved dv/dt Capability
◾ 100% Avalanche Tested
부품명
상세내역
보기
제조사
N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET ( Rev : 2002 )
STMicroelectronics
N-CHANNEL 40V - 3 mΩ - 120 A TO-220/D²PAK/I²PAK STripFET™ II MOSFET
STMicroelectronics
N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET
STMicroelectronics
Share Link: 