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STW55NM60ND
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STW55NM60ND 데이터시트 - STMicroelectronics
STMicroelectronics
Description
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on) amongst the fast
recovery diode devices in TO-247
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
APPLICATION
■ Switching applications
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N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
STMicroelectronics
N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package ( Rev : 2016 )
STMicroelectronics
N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET in a TO-247 package
STMicroelectronics
Automotive-grade N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package ( Rev : 2013 )
STMicroelectronics
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in a TO-247 package
STMicroelectronics
N-channel 650 V, 0.055 Ω typ., 49 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package ( Rev : 2012 )
STMicroelectronics
N-channel 650 V, 0.055 Ω typ., 49 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
STMicroelectronics
Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package
STMicroelectronics
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