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STW47NM60ND
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STW47NM60ND(2013) 데이터시트 - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Designed for automotive applications and
AEC-Q101 qualified
• The worldwide best R
DS(on)*area amongst the
fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities.
APPLICATIONs
• Switching applications
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