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STW23N85K5
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STW23N85K5 데이터시트 - STMicroelectronics
STMicroelectronics
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
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N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-247 package
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N-channel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5 Power MOSFET in a TO-247 package
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Automotive-grade N-channel 950 V, 0.280 Ω typ., 17.5 A MDmesh™ K5 Power MOSFET in a TO-247 package
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N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-3PF package
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N-channel 950 V, 1 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package ( Rev : 2015 )
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N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package ( Rev : 2014 )
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N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
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N-channel 500 V, 0.08 Ω typ., 45 A MDmesh™ Power MOSFET in a TO-247 package ( Rev : 2016 )
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