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STP6506
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STANSON TECHNOLOGY
STP6506 데이터시트 - STANSON TECHNOLOGY
STANSON TECHNOLOGY
DESCRIPTION
The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
FEATURE
◆ -30V/-2.8A, RDS(ON)=105mohm@VGS=-10V
◆ -30V/-2.5A, RDS(ON)=135mohm@VGS=-4.5V
◆ Super high density cell design for extremely
low RDS(ON)
◆ Exceptional an-resistance and maximum DC
current capability
◆ TSOP-6P package design
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