DESCRIPTION
   STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.

FEATURE
● 20V/8.0A, RDS(ON) = 20m-ohm (Typ.)
                                 @VGS =4.5V
● 20V/7.0A, RDS(ON) =24m-ohm
                                 @VGS =2.5V
● 20V/3.0A, RDS(ON) =32m-ohm
                                 @VGS =1.8V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional low on-resistance and
   maximum DC current capability
● TSSOP-8 package design