DESCRIPTION
Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstandingperformances.
The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

■ POLYSILICONGATE VOLTAGE DRIVEN
■ LOW THRESHOLD VOLTAGE
■ LOW ON-VOLTAGE DROP
■ HIGH CURRENT CAPABILITY
■ HIGH VOLTAGE CLAMPING FEATURE
■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS
■ AUTOMOTIVE IGNITION