부품명
STD3NM60N
Other PDF
no available.
PDF
page
15 Pages
File Size
900.9 kB
제조사
STMicroelectronics
STD3NM60N 데이터시트 - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
부품명
상세내역
보기
제조사
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package
STMicroelectronics
N-channel 600 V, 286 mΩ typ., 12 A MDmesh DM6 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ II Power MOSFET in a DPAK package ( Rev : 2018 )
STMicroelectronics
N-channel 100 V, 25 mΩ typ., 50 A, STripFET™ II Power MOSFET in a DPAK package
STMicroelectronics
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
STMicroelectronics
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
STMicroelectronics
Share Link: 