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STB34NM60N
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STB34NM60N 데이터시트 - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
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제조사
N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages ( Rev : 2018 )
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N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages ( Rev : 2020 )
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N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
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N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
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N-channel 55 V, 0.0065 Ω typ., 78 A STripFET™ II Power MOSFETs in D²PAK and TO-220 packages
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N-channel 300 V, 0.063 Ω typ., 42 A STripFET™ II Power MOSFETs in D²PAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages ( Rev : 2014 )
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