ST26025A 데이터시트 - Inchange Semiconductor
제조사

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)
• High DC Current Gain- : hFE= 750(Min.)@IC= -10A
• Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A
APPLICATIONS
• Designed for use as output devices in complementary general purpose amplifier applications.
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Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor