DESCRIPTION
   ST1413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE
● -20V/-3.4A, RDS(ON) = 130mΩ
                         @VGS = -4.5V
● -20V/-2.0A, RDS(ON) = 150mΩ
                         @VGS = -2.5V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and maximum
   DC current capability
● SOT-353 package design