
Silicon Storage Technology
PRODUCT DESCRIPTION
The SST39LF/VF160 devices are 1M x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF160 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF160 write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.
FEATURES:
• Organized as 1M x16
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF160
– 2.7-3.6V for SST39VF160
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 15 mA (typical)
– Standby Current: 4 µA (typical)
– Auto Low Power Mode: 4 µA (typical)
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Fast Read Access Time
– 55 ns for SST39LF160
– 70 and 90 ns for SST39VF160
• Latched Address and Data
• Fast Erase and Word-Program
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 µs (typical)
– Chip Rewrite Time: 15 seconds (typical) for SST39LF/VF160
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)