
Silicon Storage Technology
PRODUCT DESCRIPTION
The SST29SF512/010/020/040 and SST29VF512/010/ 020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29SFxxx devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VFxxx devices write (Program or Erase) with a 2.7- 3.6V power supply. These devices conform to JEDEC standard pinouts for x8 memories.
FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 5.0V-only for SST29SF512/010/020/040
– 2.7-3.6V for SST29VF512/010/020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 10 mA (typical)
– Standby Current:
30 µA (typical) for SST29SF512/010/020/040
1 µA (typical) for SST29VF512/010/020/040
• Sector-Erase Capability
– Uniform 128 Byte sectors
• Fast Read Access Time:
– 55 ns
– 70 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
1 second (typical) for SST29SF/VF512
2 seconds (typical) for SST29SF/VF010
4 seconds (typical) for SST29SF/VF020
8 seconds (typical) for SST29SF/VF040
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• TTL I/O Compatibility for SST29SFxxx
• CMOS I/O Compatibility for SST29VFxxx
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-pin PLCC
– 32-pin TSOP (8mm x 14mm)
– 32-pin PDIP