SST2602 데이터시트 - Secos Corporation.
제조사

Secos Corporation.
Description
The SST2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2602 is universally used for all commercial-industrial applications.
FEATUREs
* Low On-Resistance
* Capable of 2.5V Gate Drive
0.6A, 20V,RDS(ON) 600mΩ N-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
-5A, -20V, RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
-5A, -20V, RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET ( Rev : 2010 )
Secos Corporation.
520mA, 50V, RDS(ON) 1.8Ω N-Channel Enhancement Mode Power Mos.FET ( Rev : 2002 )
Secos Corporation.
3A, 60V,RDS(ON) 90mΩ N-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
520mA, 50V, RDS(ON) 1.8Ω N-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
5.5A, 30V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
3A, 60V,RDS(ON) 160mΩ N-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
5A, 30V,RDS(ON) 35mΩ N-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
5.5A, 30V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET ( Rev : 2002 )
Secos Corporation.