SSM6P41FE 데이터시트 - Toshiba
제조사

Toshiba
○ Power Management Switches
• 1.5-V drive
• Low on-resistance : RDS(ON) = 1.04 Ω (max) (@VGS = -1.5 V)
: RDS(ON) = 0.67 Ω (max) (@VGS = -1.8 V)
: RDS(ON) = 0.44 Ω (max) (@VGS = -2.5 V)
: RDS(ON) = 0.30 Ω (max) (@VGS = -4.5 V)
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) ( Rev : 2009 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOS II) ( Rev : 2000 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) ( Rev : 2011 )
Toshiba