SSM6N7002KFULXG 데이터시트 - Toshiba
제조사

Toshiba
Features
(1) AEC-Q101 qualified (Please see the orderable part number list)
(2) Low drain-source on-resistance
: RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
APPLICATIONs
• High-Speed Switching
MOSFETs Silicon N-channel MOS (U-MOSVII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVII-H) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOS-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOS-H) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOS-H)
Unspecified
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
Toshiba