SSM6N7002BFU(2009) 데이터시트 - Toshiba
제조사

Toshiba
High-Speed Switching Applications
Analog Switch Applications
• Small package
• Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V)
: RDS(ON) = 2.6 Ω (max) (@VGS = 5 V)
: RDS(ON) = 2.1 Ω (max) (@VGS = 10 V)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (U−MOS) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) ( Rev : 2003 )
Toshiba