SSM6N15AFE 데이터시트 - Toshiba
제조사

Toshiba
Load Switching Applications
• 2.5 V drive
• N-ch 2-in-1
• Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V)
RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Toshiba