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SSM6K08FU
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Toshiba
SSM6K08FU 데이터시트 - Toshiba
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High Speed Switching Applications
• Small package
• Low on resistance: Ron = 105 mΩ (max) (@VGS = 4 V)
Ron = 140 mΩ (max) (@VGS = 2.5 V)
• High-speed switching: ton = 16 ns (typ.)
toff = 15 ns (typ.)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2009 )
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