SSM6J409TU(2009) 데이터시트 - Toshiba
제조사

Toshiba
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.5V drive
• Low ON-resistance: Ron = 72.3mΩ (max) (@VGS = -1.5 V)
Ron = 46.2mΩ (max) (@VGS = -1.8 V)
Ron = 30.2mΩ (max) (@VGS = -2.5 V)
Ron = 22.1mΩ (max) (@VGS = -4.5 V)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V)
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOS II) ( Rev : 2000 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) ( Rev : 2002 )
Toshiba