1. Applications
   • Power Management Switches

2. Features
   (1) Combined a P-channel MOSFET and a Schottky barrier diode in one package.
   2.1. MOSFET Features
      (1) Low drain-source on-resistance
      : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V)
        RDS(ON) = 185 mΩ (max) (VGS = -1.8 V)
        RDS(ON) = 143 mΩ (max) (VGS = -2.5 V)
        RDS(ON) = 112 mΩ (max) (VGS = -4.5 V)
   2.2. Diode Features
      (1) Low forward voltage: VF = 0.48 V (typ.) (@IF = 1000 mA)