SSM3K329R(2010) 데이터시트 - Toshiba
제조사
Toshiba
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8-V drive
• Low ON-resistance: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V)
: RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)
: RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Toshiba
