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SSI3139J 데이터시트 - Secos Corporation.

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SSI3139J

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-0.66A, -20V, RDS(ON) 520 mΩ Dual P-Ch Enhancement Mode Power MOSFET

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3 Pages

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Secos Corporation.

DESCRIPTION
SSI3139J is a Dual P Channel MOS which has been designed to be used as a Power Trench process to optimize RDS(ON).

FEATURES
• High side switching
• Low on-resistance
• Low threshold
• Fast switching speed

APPLICATIONS
• Load/power switching
• Power supply converter circuits
• Battery-operated system

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