Features
• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes8)
• Isolated copper baseplate using DCB Direct Copper Bon ding Technology
• Large clearance (10 mm) and creepage distances (20 mm).

Typical Applications: → B 6 - 85
• Three phase inverter drives
• Switching (not for linear use)