SIHFI9640G 데이터시트 - Vishay Semiconductors
제조사

Vishay Semiconductors
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• P-Channel
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
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Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ω, ID = 2.6A
International Rectifier
HEXFET Power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ω, ID = -1.9A
International Rectifier
HEXFEP® Power MOSFET Vdss=200V RDS(on)=0.80Ω ID=4.8A
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
International Rectifier
HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 20A
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier