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SB039C025-1-W-AG
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Transys Electronics Limited
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SB039C025-1-W-AG 데이터시트 - Transys Electronics Limited
Transys Electronics Limited
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
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Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 20 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 0.5 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF
Transys Electronics Limited
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