
Cypress Semiconductor
General Description
The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory.
Distinctive Characteristics
Architectural Advantages
◾ Single power supply operation
– Full voltage range: 2.7V to 3.6V read and program operations
◾ Memory Architecture
– 128Mb uniform 256 KB sector product
– 128Mb uniform 64 KB sector product
◾ Program
– Page Program (up to 256 bytes) in 1.5 ms (typical)
– Faster program time in Accelerated Programming mode
(8.5 V–9.5 V on #WP/ACC) in 1.2 ms (typical)
◾ Erase
– 2 s typical 256 KB sector erase time
– 0.5 s typical 64 KB sector erase time
– 128 s typical bulk erase time
– Sector erase (SE) command (D8h) for 256 KB sectors; (20h or
D8h) for 64KB sectors
– Bulk erase command (C7h) for 256 KB sectors; (60h or C7h) for
64KB sectors
◾ Cycling Endurance
– 100,000 cycles per sector typical
◾ Data Retention
– 20 years typical
◾ Device ID
– RDID (9Fh), READ_ID (90h) and RES (ABh) commands to read
manufacturer and device ID information
– RES command one-byte electronic signature for backward
compatibility
◾ Process Technology
– Manufactured on 0.09 µm MirrorBit® process technology
◾ Package Option
– Industry Standard Pinouts
– 16-pin SO package (300 mils)
– 8-Contact WSON Package (6 x 8 mm)