Description
The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses RaytheonÕs pHEMT process. It is designed for use as a driver stage for Cellular/GSM base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation. The device is matched for 50 ohms input impedance. The bias currents of the amplifier can be adjusted to obtain optimum power, linearity and efficiency characteristics for GSM, AMPS, NADC and CDMA systems.

FEATUREs
■ 2 Watt Linear output power at 38 dBc ACPR1 for CDMA operation
■ Small Signal Gain of > 30 dB
■ Small outline SMD package