RJU60C3TDPP-EJ-T2 데이터시트 - Renesas Electronics
제조사

Renesas Electronics
Features
• Fast reverse recovery time: trr = 90 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
• Low forward voltage: VF = 1.4 V typ. (at IF = 30 A)
• Low reverse current: IR = 1 μA max. (at VR = 600 V)
600V - 30A - Single Diode Fast Recovery Diode
Renesas Electronics
600V - 30A - Single Diode Ultra Fast Recovery Diode
Renesas Electronics
600V - 30A - Single Diode Ultra Fast Recovery Diode
Renesas Electronics
600V - 30A - Single Diode Ultra Fast Recovery Diode
Renesas Electronics
600V - 30A - Dual Diode Ultra Fast Recovery Diode
Renesas Electronics
FAST RECOVERY DIODE 30A,400V
KIA Semiconductor Technology
30A, 600V Ultrafast Diode
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30A, 600V Ultrafast Diode
Fairchild Semiconductor
30A, 600V Ultrafast Diode
Intersil
30A, 600V Ultrafast Diode ( Rev : 2002 )
Fairchild Semiconductor