RJP1CS05DWA(2014) 데이터시트 - Renesas Electronics
제조사
Renesas Electronics
Features
• Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C)
• High speed switching
• Short circuit withstands time (10 μs min.)
1250V - 75A - IGBT Application: Inverter
Renesas Electronics
1250V - 200A - IGBT Application: Inverter
Renesas Electronics
1250V - 100A - IGBT Application: Inverter
Renesas Electronics
1250V - 30A - IGBT Application: Inverter ( Rev : 2013 )
Renesas Electronics
1250V - 100A - IGBT Application: Inverter ( Rev : 2014 )
Renesas Electronics
1250V - 50A - IGBT Application: Inverter
Renesas Electronics
1250V - 30A - IGBT Application: Inverter
Renesas Electronics
1250V - 30A - IGBT Application: Inverter
Renesas Electronics
1250V - 100A - IGBT Application: Inverter ( Rev : 2013 )
Renesas Electronics
1250V - 50A - IGBT Application: Inverter ( Rev : 2015 )
Renesas Electronics
