RJK60S7DPP-E0 데이터시트 - Renesas Electronics
제조사
Renesas Electronics
Features
● Superjunction MOSFET
● Low on-resistance
RDS(on) = 0.100 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C)
● High speed switching
tf = 15 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 Ω, Rg = 10 Ω, Ta = 25°C)
Page Link's:
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600V - 12A - SJ MOS FET High Speed Power Switching
Renesas Electronics
600V - 12A - SJ MOS FET High Speed Power Switching
Renesas Electronics
600V - 12A - SJ MOS FET High Speed Power Switching
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500V - 30A - MOS FET High Speed Power Switching
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600V - 5A - MOS FET High Speed Power Switching
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600V - 1A - MOS FET High Speed Power Switching
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600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 0.4A - MOS FET High Speed Power Switching
Renesas Electronics
