RJK5002DJE 데이터시트 - Renesas Electronics
제조사
Renesas Electronics
Features
● Low on-state resistance
RDS(on) = 3.83 Ω typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25°C)
● High speed switching
500V - 12A - MOS FET / High Speed Power Switching
Renesas Electronics
500V - 35A - MOS FET High Speed Power Switching
Renesas Electronics
500V - 6A - MOS FET High Speed Power Switching
Renesas Electronics
500V - 30A - MOS FET High Speed Power Switching
Renesas Electronics
500V - 19A - MOS FET High Speed Power Switching
Renesas Electronics
500V - 14A - MOS FET / High Speed Power Switching
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
