RJK0212DPA-00-J53 데이터시트 - Renesas Electronics
제조사

Renesas Electronics
Features
• Very high speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 9 mΩ typ. (at VGS = 10 V)
• Pb-free
• Halogen-free
Silicon N Channel Power MOS FET Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching ( Rev : 2010_07 )
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching ( Rev : 2005 )
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics