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RFD14N05(2004) 데이터시트 - Fairchild Semiconductor

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RFD14N05

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Fairchild
Fairchild Semiconductor 

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits
   
Features
• 14A, 50V
• rDS(ON) = 0.100Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount
        Components to PC Boards”
   

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