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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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RF2336 데이터시트 - RF Micro Devices

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RF2336

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RFMD
RF Micro Devices 

Product Description
The RF2336 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz.


FEATUREs
• DC to 3000MHz Operation
• Internally matched Input and Output
• 20dB Small Signal Gain
• 3.8dB Noise Figure
• 10mW Linear Output Power
• Single Positive Power Supply

Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment

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