DESCRIPTION
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

FEATURES
   High power gain:
      Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
   High Efficiency: 55%typ.

APPLICATION
   For output stage of high power amplifiers in UHF
   band mobile radio sets.