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RB715W 데이터시트 - Transys Electronics Limited
제조사
Transys Electronics Limited
FEATURES:
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IF: 30 mA
Collector-base voltage
VR: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER TYPE
Toshiba
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Schottky barrier diode
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Schottky barrier diode
( Rev : RevA )
ROHM Semiconductor
Schottky barrier diode
( Rev : Old_V )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevB )
ROHM Semiconductor
Schottky barrier diode
( Rev : Old_V )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevC )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2009 )
ROHM Semiconductor
