RB706F-40 데이터시트 - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
제조사

SHENZHEN YONGERJIA INDUSTRY CO.,LTD
FEATURES:
Power dissipation
PD : 200 mW( Tamb=25℃)
Collector current
IF: 30 mA
Collector-base voltage
VR : 40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER TYPE
Toshiba
Schottky barrier diode
( Rev : RevA )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2010 )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2011 )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevA )
ROHM Semiconductor
Schottky barrier diode
( Rev : Old_V )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevB )
ROHM Semiconductor
Schottky barrier diode
( Rev : Old_V )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevC )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2009 )
ROHM Semiconductor