datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  TriQuint Semiconductor  >>> QPD1016 PDF

QPD1016 데이터시트 - TriQuint Semiconductor

QPD1016 image

부품명
QPD1016

Other PDF
  no available.

PDF
DOWNLOAD     

page
25 Pages

File Size
1.8 MB

제조사
TriQuint
TriQuint Semiconductor 

Product Overview
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.


KEY FEATUREs
• Frequency: DC to 1.7 GHz
• Output Power (P3dB)1: 680 W
• Linear Gain1: 23.9 dB
• Typical PAE3dB1: 77.4%
• Operating Voltage: 50 V
• CW and Pulse capable
   Note 1: @ 1.3 GHz Load Pull


APPLICATIONs
• IFF
• Avionics
• Military and civilian radar
• Test instrumentation


부품명
상세내역
보기
제조사
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
PDF
Qorvo, Inc
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
PDF
Qorvo, Inc
DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor
PDF
Qorvo, Inc
DC – 25 GHz, 28 V, 14 W GaN RF Transistor
PDF
Qorvo, Inc
DC – 25 GHz, 28 V, 7 W GaN RF Transistor
PDF
Qorvo, Inc
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
PDF
Qorvo, Inc
400 W, 50 V, 2.7 – 2.9 GHz, GaN RF Power Transistor
PDF
Qorvo, Inc
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
PDF
Qorvo, Inc
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
PDF
Qorvo, Inc
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
PDF
Qorvo, Inc

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]