General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
■ Trench MOSFET technology
■ Very fast switching
■ Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
■ Exposed drain pad for excellent thermal conduction
■ Tin-plated 100 % solderable side pads for optical solder inspection

APPLICATIONs
■ Charging switch for portable devices
■ DC-to-DC converters
■ Power management in battery-driven portables
■ Hard disk and computing power management