PJA94N03_00001 데이터시트 - PANJIT INTERNATIONAL
제조사

PANJIT INTERNATIONAL
FEATURES
• RDS(ON), VGS@10V,ID@3.1A< 57 mΩ
• RDS(ON), VGS@4.5V,ID@2.8A< 94 mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Gate Charge
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
30V N-Channel Enhancement Mode MOSFET
Shenzhen Jin Yu Semiconductor Co., Ltd.
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
30V N-CHANNEL Enhancement Mode MOSFET
Cystech Electonics Corp.
30V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 1999 )
Zetex => Diodes
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Zetex => Diodes
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZP Semiconductor
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.