Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
Tyco Electronics
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Tyco Electronics
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz ( Rev : V2 )
Tyco Electronics
Radar Pulsed Power Transistor 50 W, 2.2 - 2.6 GHz, 100 µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.