PDTC123EMB 데이터시트 - Nexperia B.V. All rights reserved
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Nexperia B.V. All rights reserved
General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA123EMB.
FEATUREs and benefits
■ 100 mA output current capability
■ Reduces component count
■ Built-in bias resistors
■ Reduces pick and place costs
■ Simplifies circuit design
■ AEC-Q101 qualified
■ Leadless ultra small SMD plastic
package
■ Low package height of 0.37 mm
APPLICATIONs
■ Low-current peripheral driver
■ Control of IC inputs
■ Replaces general-purpose transistors
in digital applications
■ Mobile applications
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Nexperia B.V. All rights reserved
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
NXP Semiconductors.
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Nexperia B.V. All rights reserved
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
NXP Semiconductors.
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
NXP Semiconductors.
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Philips Electronics
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Nexperia B.V. All rights reserved
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Philips Electronics
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Philips Electronics
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
NXP Semiconductors.