PBHV9115TLH 데이터시트 - Nexperia B.V. All rights reserved
제조사

Nexperia B.V. All rights reserved
General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8115TLH
FEATUREs and benefits
• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• Small SMD plastic package
• AEC-Q101 qualified
APPLICATIONs
• Power management
• LCD backlighting
• LED driver for LED chain module
• Switch Mode Power Supply (SMPS)
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
150 V, 1 A NPN high-voltage low VCEsat BISS transistor
Nexperia B.V. All rights reserved
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved