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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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NX5313EH 데이터시트 - Renesas Electronics

NX5313 image

부품명
NX5313EH

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9 Pages

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제조사
Renesas
Renesas Electronics 

DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.


FEATURES
• Optical output power Po = 13.0 mW
• Low threshold current lth = 6 mA
• Differential Efficiency ηd = 0.5 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.35 mm
• LD beam angle optimized for 8 degree angled SMF


APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system


부품명
상세내역
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제조사
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
NEC => Renesas Technology
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
PDF
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
PDF
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
PDF
California Eastern Laboratories.
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
PDF
California Eastern Laboratories.
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
PDF
Renesas Electronics
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.

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