NTE63 데이터시트 - NTE Electronics
제조사
NTE Electronics
Description:
The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.
FEATUREs:
● High Current Gain–Bandwidth Product: fT = 5GHz Typ @ f = 1GHz
● High Power Gain: Gpe = 12.5dB Min @ f = 1GHz
Silicon NPN Transistor High Gain, Low Noise Amp
NTE Electronics
Silicon NPN Transistor High Gain, Low Noise Amp
NTE Electronics
Silicon NPN Transistor Low Noise, High Gain Amplifier
NTE Electronics
NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
Micro Electronics
Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp
NTE Electronics
NPN SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Micro Electronics
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION
Renesas Electronics
Silicon PNP Transistor Low Noise, High Gain Amplifier
NTE Electronics
NPN LOW LEVEL LOW NOISE HIGH GAIN AMPLIFIER ( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Transistor High Gain Power Amp
NTE Electronics
