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NJW0281G
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Inchange Semiconductor
NJW0281G 데이터시트 - Inchange Semiconductor
Inchange Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min)
• Good Linearity of hFE
• Complement to Type NJW0302GD
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for high fidelity audio amplifier and
other linear applications
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