NJD1718 데이터시트 - Inchange Semiconductor
제조사

Inchange Semiconductor
DESCRIPTION
• Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A)
• High Switching speed
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for high-gain audio amplifier and power
Switching applications.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
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Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
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Silicon PNP Power Transistor
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Silicon PNP Power Transistor
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Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor