Power MOSFET
9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Benefits
• High Energy Capability for Inductive Loads
• Low Switching Noise Generation

FEATUREs
• Diode Clamp Between Gate and Source
• ESD Protection − HBM 5000 V
• Active Over−Voltage Gate to Drain Clamp
• Scalable to Lower or Higher RDS(on)
• Internal Series Gate Resistance
• Pb−Free Packages are Available

APPLICATIONs
• Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers